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Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

Dual in-plane-gate oxide-based thin-film transistors with tunable threshold voltage

(5) Jiang, Jie a Sun, Jia a Zhu, Liqiang b Wu, Guodong b Wan, Qing a,b

a HUNAN UNIVERSITY (China)

b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

Author keywords

[No Author keywords available]

Indexed keywords

GATE CAPACITORS; IN-PLANE GATES; INDIUM TIN OXIDE; ITO ELECTRODES; LARGE CURRENT; MODEL-BASED OPC; ON/OFF RATIO; OPERATION MECHANISM; SELF-ASSEMBLED; SHADOW MASK; SUBTHRESHOLD SWING; UNIQUE FEATURES;

GATES (TRANSISTOR); SILICON COMPOUNDS; SOLID ELECTROLYTES; THRESHOLD VOLTAGE; TIN;

THIN FILM TRANSISTORS;

EID: 80053212198 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3636404 Document Type: Article

Times cited : (17)

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