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Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates

(5) Jiang, Jie a,b Sun, Jia a,b Dou, Wei a,b Zhou, Bin a,b Wan, Qing a,b

a HUNAN UNIVERSITY (China)

b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; IN-PLANE; IN-PLANE GATES; INDIUM TIN OXIDE; ITO ELECTRODES; MODEL-BASED; ON/OFF RATIO; OPERATION MECHANISM; PAPER SUBSTRATE; ROOM TEMPERATURE; SELF-ASSEMBLED; SHADOW MASK; SUBTHRESHOLD SWING;

INDIUM; PHOTOLITHOGRAPHY; TIN;

THIN FILM TRANSISTORS;

EID: 79952980143 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567946 Document Type: Article

Times cited : (28)

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