Dopant segregation analysis on Sb:SnO2 nanocrystals

Chemistry - A European Journal

Volumn 17, Issue 41, 2011, Pages 11515-11519

  Stroppa, Daniel G ^a,b   Montoro, Luciano A ^a   Beltrán, Armando ^c   Conti, Tiago G ^d   Da Silva, Rafael O ^d   Andrés, Juan ^c   Leite, Edson R ^d   Ramirez, Antonio J ^a,b  

^a BRAZILIAN CENTER FOR RESEARCH IN ENERGY AND MATERIALS CNPEM   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSITAT JAUME I   (Spain)

^d FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

Author keywords

antimony; doping; molecular modeling; nanostructures; surface chemistry; tin

Indexed keywords

AB INITIO CALCULATIONS; ACTIVE MECHANISM; ANTIMONY-DOPED TIN OXIDE; ATOMIC SCALE; CHARACTERIZATION TECHNIQUES; COMPOSITIONAL INFORMATION; CRYSTAL GROWTH MECHANISM; DOPANT ATOMS; DOPANT DISTRIBUTION; DOPANT SEGREGATION; DOPING ELEMENTS; NANO-STRUCTURED; NANOPARTICLE SHAPE; NANOSIZED MATERIALS; QUANTITATIVE CHARACTERIZATION; SB DOPING; SIGNAL TO NOISE; SPATIAL RESOLUTION; SYNTHESIS PARAMETERS; SYSTEM COMPOSITION; TECHNOLOGICAL ADVANCES; THREE-DIMENSIONAL MODEL;

ANTIMONY; CALCULATIONS; CRYSTAL GROWTH; DOPING (ADDITIVES); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MATERIALS PROPERTIES; MOLECULAR MODELING; NANOCRYSTALS; NANOSTRUCTURES; SIGNAL TO NOISE RATIO; SURFACE CHEMISTRY; SURFACE SEGREGATION; SURFACES; THREE DIMENSIONAL; TIN; TIN OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CHARACTERIZATION;

EID: 80053194896     PISSN: 09476539     EISSN: 15213765     Source Type: Journal    
DOI: 10.1002/chem.201100972     Document Type: Article

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