Geometry enhanced asymmetric rectifying tunneling diodes

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

  Choi, Kwangsik ^a   Ryu, Geunmin ^a   Yesilkoy, Filiz ^a   Chryssis, Athanasios ^a   Goldsman, Neil ^a   Dagenais, Mario ^a   Peckerar, Martin ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTILLATION; POLYSILICON; SILICON COMPOUNDS; TUNNEL DIODES;

900 MHZ; BAND-EDGE OFFSET; CURRENT VOLTAGE; FIELD ENHANCEMENT; GEOMETRIC ASYMMETRIES; MICROWAVE RADIATIONS; PLASMONIC; TUNNELING DIODES; TUNNELING STRUCTURE;

DIODES;

EID: 84905929116     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3501350     Document Type: Article

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