SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 9 PART 2, 2011, Pages

Ultra high density scanning electrical probe phase-change memory for archival storage

(7) Wang, Lei a Wright, C David b Shah, Purav c Aziz, Mustafa M b Sebastian, Abu d Pozidis, Haralampos d Pauza, Andrew e

a NANCHANG HANGKONG UNIVERSITY (China)

b UNIVERSITY OF EXETER (United Kingdom)

c MIDDLESEX UNIVERSITY (United Kingdom)

d IBM RESEARCH ZURICH (Switzerland)

e Plarion Limited (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIT SIZE; COMPUTATIONAL SIMULATION; ELECTRICAL CONTACT RESISTANCE; ELECTRICAL PROBES; PHASE CHANGES; PROBE-BASED; RECORDING MEDIUM; THERMAL BOUNDARY RESISTANCE; THRESHOLD SWITCHING; ULTRAHIGH DENSITY;

COMPUTER SIMULATION; PROBES;

PHASE CHANGE MEMORY;

EID: 80053017634 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.09MD04 Document Type: Article

Times cited : (12)

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