Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon

Nature Nanotechnology

Volumn 5, Issue 3, 2010, Pages 181-185

  Bhaskaran, Harish ^a,d   Gotsmann, Bernd ^a   Sebastian, Abu ^a   Drechsler, Ute ^a   Lantz, Mark A ^a   Despont, Michel ^a   Jaroenapibal, Papot ^b,e   Carpick, Robert W ^b   Chen, Yun ^c,f   Sridharan, Kumar ^c  

^a IBM RESEARCH ZURICH   (Switzerland)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c University of Wisconsin Madison   (United States)

^d Yale University   (United States)

^e KHON KAEN UNIVERSITY   (Thailand)

^f WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIAMONDS; FRICTION; NANOTECHNOLOGY; SILICA; SILICON; SILICON OXIDES; TRIBOLOGY; WEAR OF MATERIALS;

ACTIVATION VOLUME; AMBIENT CONDITIONS; BATCH FABRICATION; DIAMOND LIKE CARBON; MACROSCOPIC SCALE; NANO-MANUFACTURING; SILICON-ON-SILICON; THREE ORDERS OF MAGNITUDE; MATERIAL STRENGTH;

NANOSTRUCTURED MATERIALS;

CARBON; DIAMOND; NANOMATERIAL; SILICON; SILICON DIOXIDE;

ARTICLE; ATOM; ATOMIC FORCE MICROSCOPY; CONTAMINATION; CONTROLLED STUDY; ENERGY; FRICTION; HUMIDITY; IMAGE ANALYSIS; MECHANICAL STRESS; PRIORITY JOURNAL; SHEAR STRESS;

EID: 77949263581     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.3     Document Type: Article

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