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Journal of Electronic Materials

Volumn 40, Issue 10, 2011, Pages 2043-2050

On the role of boron in CdTe and CdZnTe crystals

(6) Pavesi, M a,b Marchini, L a Zha, M a Zappettini, A a Zanichelli, M a,b Manfredi, M b

a IMEM CNR (Italy)

b UNIVERSITY OF PARMA (Italy)

Author keywords

CdTe; CdZnTe; defects; impurities; photoluminescence; x ray detectors

Indexed keywords

BORON CONCENTRATIONS; BORON CONTAMINATION; BORON OXIDES; CDTE; CDZNTE; CDZNTE CRYSTALS; CURRENT-VOLTAGE MEASUREMENTS; ETCH PIT DENSITY; GROUP III; GROWTH METHOD; GROWTH TECHNIQUES; HIGH RESISTIVITY; LOW TEMPERATURE PHOTOLUMINESCENCE; MASS PRODUCTION; METALLIC SITES; SELF-COMPENSATION; SINGLE GRAINS; STATE-OF-THE-ART PERFORMANCE; TRANSPORT MECHANISM; VERTICAL BRIDGMAN TECHNIQUE; X-RAY DETECTOR;

BORON COMPOUNDS; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL IMPURITIES; CRYSTALS; DEFECTS; DETECTORS; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; GRAIN BOUNDARIES; IMPURITIES; PHOTOLUMINESCENCE; STACKING FAULTS; TELLURIUM COMPOUNDS; X RAY APPARATUS; X RAY SPECTROSCOPY;

BORON;

EID: 80052965961 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1706-x Document Type: Article

Times cited : (11)

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