Boron oxide encapsulated vertical bridgman grown CdZnTe crystals as X-ray detector material

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 1743-1746

  Zappettini, Andrea ^a   Zha, Mingzheng ^a   Marchini, Laura ^a   Calestani, Davide ^a   Mosca, Roberto ^a   Gombia, Enos ^a   Zanotti, Lucio ^a   Zanichelli, Massimiliano ^b   Pavesi, Maura ^b   Auricchio, Natalia ^c,d   Caroli, Ezio ^d  

^a RICE UNIVERSITY   (United States)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF FERRARA   (Italy)

^d OSSERVATORIO ASTRONOMICO DI BOLOGNA   (Italy)

Author keywords

Cadmium Zinc Telluride; Crystal growth; Semiconductor growth; Semiconductor materials; Semiconductor radiation detectors

Indexed keywords

BACKGROUND IMPURITIES; BORON OXIDES; BRIDGMAN; CADMIUM ZINC TELLURIDE; CDZNTE CRYSTALS; ETCH PIT DENSITY; HIGH RESISTIVITY; MOBILITY-LIFETIME PRODUCTS; PHOTOCURRENT SPECTROSCOPY; SEMICONDUCTOR RADIATION DETECTORS; SINGLE-CRYSTALLINE; VERTICAL BRIDGMAN TECHNIQUE; X RAY IRRADIATION; X-RAY DETECTOR;

BORON; CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; GRAIN BOUNDARIES; PHOTOCURRENTS; RADIATION DAMAGE; RADIATION DETECTORS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; X RAY APPARATUS; ZINC;

SEMICONDUCTOR GROWTH;

EID: 69549102073     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2016964     Document Type: Conference Paper

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