Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium telluride

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1720-1725

  Zha, M ^a   Bissoli, F ^a   Zappettini, A ^b   Zuccalli, G ^a   Zanotti, L ^a   Paorici, C ^c  

^a CNR   (Italy)

^b CORECOM ^*  (Italy)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

A1. Purification; A2. Growth from vapor; B2. Semiconducting II VI compounds

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRIC HEAT TREATMENT; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; PURIFICATION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY; VAPOR PRESSURE;

EFFUSION;

VAPOR PHASE EPITAXY;

EID: 0036531176     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02316-8     Document Type: Article

References (12)