Deep level characterization of undoped CdTe crystals

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 881-884

  Gombia, E ^a   Bissoli, F ^a   Zha, M ^a   Zappettini, A ^a   Gorog T ^a   Zanotti, L ^a  

^a IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGMAN TECHNIQUES; CDTE CRYSTALS; DEEP-LEVELS; IMPURITY CONTENT; INNOVATIVE TECHNIQUES; SEMI-INSULATING MATERIALS; STRONGLY CONNECTED; VAPOUR TRANSPORT;

CRYSTAL IMPURITIES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY;

CADMIUM TELLURIDE;

EID: 33645266777     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306234     Document Type: Conference Paper

References (18)

1. D. De Nobel, Philips Res. Rep. 14, 430 (1959).
2. M. Fiederle, T. Feltgen, J. Meinhardt, M. Rogalla, and K. W. Benz, J. Cryst. Growth 197, 635 (1999).
3. K. Durose, D. Boyle, A. Abken, C. J. Ottley, P. Nollet, S. Degrave, M. Burgelman, R. Wendt, J. Beier, and D. Bonnet, phys. stat. sol. (b) 229, 1055 (2002).
4. P. Boffi, D. Piccinin, A. Tonini, A. Zappettini, and M. Martinelli, in: Optics in Computing 2000, edited by R. A. Lessard, T. Galstian, Vol. 4089 (SPIE, Washington, 2000), p. 297.
5. Y. Mairfaing, J. Crystal Growth 197, 707 (1999).
6. J. H. Greenberg, J. Crystal Growth 197, 406 (1999).
7. R. Fang and R. F. Brebrick, J. Electrochem. Soc. 197, 443 (1995).
8. M. A. Berding, Phys. Rev. B 60, 8943 (1999).
9. A. Zappettini, T. Görög, M. Zha, L. Zanotti, G. Zuccalli, and C. Paorici, J Cryst. Growth 214/215, 14 (2000).
10. M. Zha, F. Bissoli, A. Zappettini, G. Zuccalli, L. Zanotti, and C. Paorici, J. Crystal Growth, in press.
11. M. Zka, T. Görög, A. Zappettini, F. Bissoli, L. Zanotti, and C. Paorici, J. Crystal Growth 234, 184 (2002).
12. M. Zha, E. Gombia, F. Bissoli, A. Zappettini, and L. Zanotti, phys. stat. sol. (b) 229, 15 (2002).
13. J. J. Mares, V. Smid, J. Kristofik, P. Hubik, and T. Sarapatka, Semi-insulating III-V Materials, edited by G. Gossmann and L. Ledebo (Shiva Publ. Ltd., Malmo, 1988), pp. 171-176.
14. T. Takebe, J. Saraie, and H. Matsunami, J. Appl. Phys. 53, 457 (1982).
15. A. Castaldini, A. Cavallini, B. Fraboni, P. Fernandez, and J. Piqueras, J. Appl. Phys. 83, 2121 (1998).
16. Chian-Ping Ye and Joseph H. Chen, J. Appl. Phys. 67, 2475 (1990).
17. N. Krsmanovic, K. G. Lynn, M. H. Weber, R. Tjoeem, Th. Gessmann, Cs. Szeles, E. E. Eissler, J. P. Flint, and H. L. Glass, Phys. Rev. B 62, R16 279 (2000).
18. M. A. Berding, Appl. Phys. Lett. 74, 552 (1999).