Thermal-mechanical behavior of the bonding wire for a power module subjected to the power cycling test

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1819-1823

  Hung, T Y ^a   Chiang, S Y ^a   Huang, C J ^a   Lee, C C ^c   Chiang, K N ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHOD; BONDING WIRES; CHIP POWER; CYCLIC POWER; DRIVING FORCES; FE ANALYSIS; FINITE ELEMENTS; INFRARED THERMOMETERS; INTERNATIONAL ELECTROTECHNICAL COMMISSION; JUNCTION TEMPERATURES; MECHANICAL BEHAVIOR; POWER CYCLING; POWER MODULE; SEMICONDUCTOR CHIPS; THERMAL IMPEDANCE; THERMAL-MECHANICAL BEHAVIOR;

ELECTRIC LOAD FORECASTING; ELECTRIC POWER SYSTEMS; MECHANICAL ENGINEERING; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION; WIRE;

FINITE ELEMENT METHOD;

EID: 80052956358     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.048     Document Type: Conference Paper

References (10)

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