A reliable technology concept for active power cycling to extreme temperatures

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1927-1932

  Nelhiebel, M ^a   Illing, R ^a   Schreiber, C ^a   Wohlert S ^a   Lanzerstorfer, S ^a   Ladurner, M ^a   Kadow, C ^b   Decker, S ^b   Dibra, D ^b   Unterwalcher, H ^c   Rogalli, M ^b   Robl, W ^b   Herzig, T ^b   Poschgan, M ^a   Inselsbacher, M ^a   Glavanovics, M ^c   Fraisse S ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Kompetenzzentrum für Automobil und Industrieelektronik GmbH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE POWER; CONVENTIONAL SYSTEMS; COPPER-BASED; DEGRADATION MECHANISM; ELECTRICAL POWER; EXPERIMENTAL INVESTIGATIONS; EXTREME TEMPERATURES; PEAK TEMPERATURES; PHYSICAL ANALYSIS; SILICON DEVICES; THERMAL SIMULATIONS; TRENCH POWER MOSFET;

DEGRADATION;

EID: 80052916743     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.042     Document Type: Conference Paper

References (8)

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2. M. Pfost, J. Joos, and M. Stecher Measurement and simulation of self-heating in DMOS transistors up to very high temperatures Proc ISPSD 2008 209 212
3. Th. Detzel, M. Glavanovics, and K. Weber Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions Microelectron Rel 44 2004 1485 1490
4. S. Russo, R. Letor, O. Viscuso, L. Torrisi, and G. Vitali Fast thermal fatigue on top metal layer of power devices Microelectron Rel 42 2002 1617 1622
5. S. Gopalan, B. Krabbenborg, J.-H. Egbers, B. van Velzen, and R. Zingg Reliability of power transistors against application driven temperature swings Microelectron Rel 42 2002 1623 1628
6. J.B. Sauveplane, P. Tounsi, E. Scheid, and A. Deram 3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET Microelectron Rel 48 2008 1464 1467
7. Dibra D, Kadow C, Pfost M, Krischke N, Lindemann A, Lutz J, et al. Scaling of temperature sensors for smart power MOSFETs. In Proceedings of the 9th international seminar on power semiconductors (ISPS'08), Prague, Czech Republic; August 2008. pp.139-48.
8. Dibra D, Stecher M, Decker S, Lindemann A, Lutz J, Kadow C. On the origin of thermal run-away in a trench power MOSFET. IEEE Trans Elec Dev in press, doi:10.1109/TED.2011.2160867.