Noise spectroscopy of traps in silicon nanowire field-effect transistors

Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Volumn , Issue , 2011, Pages 242-245

  Pud, S ^a   Li, J ^a   Petrychuk, M ^b   Feste, S ^a   Offenhausser, A ^a   Mantl, S ^a   Vitusevich, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

FET; noise; silicon nanowire; trap density

Indexed keywords

FET; FLICKER NOISE; GATE OXIDE; LORENTZIAN NOISE; NOISE; NOISE SPECTRA; NOISE SPECTROSCOPY; PLANAR TRANSISTORS; SILICON NANOWIRE; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; TRAP DENSITY;

NANOWIRES; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80052754588     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICNF.2011.5994309     Document Type: Conference Paper

References (8)

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