Light extraction improvement from GaN-based light-emitting diodes with nano-patterned surface using anodic aluminum oxide template

IEEE Photonics Technology Letters

Volumn 20, Issue 23, 2008, Pages 1974-1976

  Dai, Tao ^a   Zhang, Bei ^a   Kang, Xiang Ning ^a   Bao, Kui ^a   Zhao, Wen Zhu ^b   Xu, Dong Sheng ^b   Zhang, Guo Yi ^a   Gan, Zi Zhao ^a  

^a PEKING UNIVERSITY   (China)

^b Peking University   (China)

Author keywords

Anodic aluminum oxide (AAO); GaN; Light emitting diodes (LEDs); Nano technology

Indexed keywords

ALUMINA; ALUMINUM; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT METALS; NANOSTRUCTURES; OPTICAL MICROSCOPY; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDES; PLASMA ETCHING; SEMICONDUCTING GALLIUM; TIN; TITANIUM COMPOUNDS;

ANODIC ALUMINUM OXIDE (AAO); ANODIC ALUMINUM OXIDE TEMPLATES; ETCHING MASKS; GAN; INDIUM TIN OXIDES; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTIONS; LIGHT OUTPUT POWERS; LIGHT- EMITTING DIODES (LEDS); NANO-TECHNOLOGY; OPTICAL MODES; PATTERNED SURFACES; PORE DENSITIES; PORE DEPTHS; PORE DIAMETERS; PROCEDURAL STEPS;

LIGHT EMITTING DIODES;

EID: 57049144240     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2005645     Document Type: Article

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