Measurements of thermoelectric properties of silicon pillars

Sensors and Actuators, A: Physical

Volumn 171, Issue 1, 2011, Pages 48-53

  Stranz, A ^a   Sokmen U ^a   Kahler J ^a   Waag, A ^a   Peiner, E ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

ICP cryogenic dry etching; Silicon pillar; Thermoelectric

Indexed keywords

BISMUTH TELLURIDE; BULK SILICON; CONVENTIONAL MATERIALS; DEVICE APPLICATION; DEVICE GEOMETRIES; ENVIRONMENTALLY-FRIENDLY; HEAT PROPAGATION; HIGH THERMAL CONDUCTIVITY; ICP CRYOGENIC DRY ETCHING; INDUCTIVE COUPLED PLASMA; LEAD TELLURIDE; NANO-STRUCTURING; NANOSTRUCTURED SILICON; OPERATING TEMPERATURE; PILLAR DIAMETERS; RAPID DEVELOPMENT; REDUCTION OF THERMAL CONDUCTIVITY; SILICON PILLAR; THERMAL OXIDATION; THERMOELECTRIC; THERMOELECTRIC GENERATORS; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; THERMOELECTRICS; TOP-DOWN PROCESS; WAFER-SCALE;

BISMUTH; BISMUTH COMPOUNDS; CRYOGENICS; DRY ETCHING; MATERIALS PROPERTIES; MICROELECTRONICS; PLASMA ETCHING; SILICON WAFERS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052315831     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2011.01.022     Document Type: Conference Paper

References (15)

1. R. Venkatasubramanian, E. Silvola, T. Colpitts, and B. O'Quinn Thin-film thermoelectric devices with high room-temperature figures of merit Nature 413 2001 597 602 (Pubitemid 32964053)
2. T.C. Harman, M.P. Walsh, B.E. Laforge, and G.W. Turner Nanostructured thermoelectric materials J. Electron. Mater. 34 2005 19 22
3. K. Matsubara, and M. Matsuura A Thermoelectric Application to Vehicles D.M. Rowe, Thermoelectric Handbook-Macro to Nano 2006 CRC Boca Raton (Fl) pp. 52-1-52-11
4. J. Kähler, N. Heuck, G. Palm, A. Stranz, A. Waag, and E. Peiner Die-attach for high-temperature applications using fineplacer-pressure-sintering (FPS) Proceedings of the 3rd Electronics System Integration Conference 2010 978-1-4244-8555-0
5. A.I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J.-K. Yu, W.A. Goddard III, and J.R. Heath Silicon nanowires as highly efficient thermoelectric materials Nature 451 2008 168 171
6. A.I. Hochbaum, R. Chen, R. Diaz Delgado, W. Liang, E.C. Garnett, M. Najarian, A. Majumdar, and P. Yang Enhanced thermoelectric performance of rough silicon nanowires Nature 451 2008 163 168
7. A. Stranz, Ü. Sökmen, E. Peiner, and A. Waag Sapphire on silicon assembly using a nanostructured compliant interface Proceedings of 22nd Intern. Conf. Eurosensors 2008 1246 1249
8. Ü. Sökmen, A. Stranz, S. Fündling, S. Merzsch, R. Neumann, H.-H. Wehmann, E. Peiner, and A. Waag Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process Microsyst. Technol. 16 2010 863 870
9. Ü. Sökmen, A. Stranz, S. Fündling, H.-H. Wehmann, V. Bandalo, A. Bora, M. Tornow, A. Waag, and E. Peiner Capabilities of ICP-RIE cryogenic dry etching of silicon J. Micromech. Microeng. 19 2009 105005
10. K. Lilienthal, M. Fischer, M. Stubenrauch, and A. Schober Self-organized nanostructures in silicon and glass for MEMS, MOEMS and BioMEMS Mater. Sci. Eng. B 169 2010 78 84
11. I-Yu Huang, Jr-Ching Lin, Kun-Dian She, Ming-Chan Li, Jiann-Heng Chen, and Jin-Shun Kuo Development of low-cost micro-thermoelectric coolers utilizing MEMS technology Sens. Actuators A 148 2008 176 185
12. G.B.M. Fiege, A. Altes, R. Heiderhoff, and L.J. Balk Quantitative thermal conductivity measurements with nanometer resolution J. Phys. D: Appl. Phys. 32 1999 13 17
13. D.G. Cahill Thermal conductivity measurement from 30 to 750 K: the 3ω method Rev. Sci. Instrum. 61 1990 802 808
14. Y. Sungtaek Ju Phonon heat transport in silicon nanostructures Appl. Phys. Lett. 87 2005 153106
15. P. Martin, Z. Aksamija, E. Pop, and U. Ravaioli Impact of phonon-surface roughness scattering on thermal conductivity of thin Si nanowires Phys. Rev. Lett. 102 2009 125503