Pockels effect based fully integrated, strained silicon electro-optic modulator

Optics Express

Volumn 19, Issue 18, 2011, Pages 17212-17219

  Chmielak, Bartos ^a   Waldow, Michael ^a   Matheisen, Christopher ^a   Ripperda, Christian ^a   Bolten, Jens ^b   Wahlbrink, Thorsten ^b   Nagel, Michael ^b   Merget, Florian ^a   Kurz, Heinrich ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL FREQUENCY CONVERSION; WAVEGUIDES;

DIFFERENCE-FREQUENCY GENERATION; EFFECTIVE INDEX; ELECTRO-OPTIC MODULATORS; ELECTROOPTIC EFFECTS; FULLY INTEGRATED; INVERSION SYMMETRY; LINEAR DEPENDENCE; LINEAR ELECTRO-OPTIC EFFECT; LOCAL STRAINS; MICRO-RAMAN; MODULATION VOLTAGE; OPTICAL ACTIVITY; POCKELS EFFECT; SECOND ORDERS; SECOND-ORDER SUSCEPTIBILITY; SILICON CRYSTAL; SILICON WAVEGUIDE; SPATIALLY RESOLVED; STRAIN LAYERS; STRAINED SILICON; TERAHERTZ;

ELECTROOPTICAL DEVICES;

EID: 80052191678     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.017212     Document Type: Article

References (20)

1. E. L. Wooten, K. M. Kissa, A. Yi-Yan, E. J. Murphy, D. A. Lafaw, P. F. Hallemeier, D. Maack, D. V. Attanasio, D. J. Fritz, G. J. McBrien, D. E. Bossi, "A review of lithium niobate modulators for fiber-optic communications systems," IEEE J. Sel. Top. Quantum Electron. 6(1), 69-82 (2000). (Pubitemid 30583900)
2. G. L. Li and P. K. L. Yu, "Optical intensity modulators for digital and analog applications," J. Lightwave Technol. 21(9), 2010-2030 (2003).
3. R. A. Soref and J. P. Lorenzo, "All-silicon active and passive guided-wave components for a; = 1.3 and 1.6 μ m," IEEE J. Quantum Electron. 22(6), 873-879 (1986).
4. Q. F. Xu, B. Schmidt, S. Pradhan, M. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature 435(7040), 325-327 (2005). (Pubitemid 40745539)
5. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, M. Paniccia, "40 Gbit/s silicon optical modulator for high-speed applications," Electron. Lett. 43(22), 1196-1197 (2007). (Pubitemid 47631710)
6. πL integrated on 0.25μ m silicon-on-insulator waveguides," Opt. Express 18(8), 7994-7999 (2010).
7. X. Z. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. L. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, A. V. Krishnamoorthy, "Ultra-low-energy all-CMOS modulator integrated with driver," Opt. Express 18(3), 3059-3070 (2010).
8. S. Manipatruni, K. Preston, L. Chen, M. Lipson, "Ultra-low voltage, ultra-small mode volume silicon microring modulator," Opt. Express 18(17), 18235-18242 (2010).
9. A. Khilo, C. M. Sorace, F. X. Kartner, "Broadband linearized silicon modulator," Opt. Express 19(5), 4485-4500 (2011).
10. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, J. Michel, "Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators," Nat. Photonics 2(7), 433-437 (2008).
11. J. H. Wülbern, S. Prorok, J. Hampe, A. Petrov, M. Eich, J. Luo, A. K.-Y. Jen, M. Jenett, A. Jacob, "40 GHz electro-optic modulation in hybrid silicon-organic slotted photonic crystal waveguides," Opt. Lett. 35(16), 2753-2755 (2010).
12. M. Gould, T. Baehr-Jones, R. Ding, S. Huang, J. Luo, A. K.-Y. Jen, J.-M. Fedeli, M. Fournier, M. Hochberg, "Silicon-polymer hybrid slot waveguide ring-resonator modulator," Opt. Express 19(5), 3952-3961 (2011).
13. L. Alloatti, D. Korn, R. Palmer, D. Hillerkuss, J. Li, A. Barklund, R. Dinu, J. Wieland, M. Fournier, J. Fedeli, H. Yu, W. Bogaerts, P. Dumon, R. Baets, C. Koos, W. Freude, J. Leuthold, "42.7 Gbit/s electro-optic modulator in silicon technology," Opt. Express 19(12), 11841-11851 (2011).
14. R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, A. Bjarklev, "Strained silicon as a new electro-optic material," Nature 441(7090), 199-202 (2006).
15. J. Fage-Pedersen, L. H. Frandsen, A. V. Lavrinenko, P. I. Borel, "A linear electro-optic effect in silicon, induced by use of strain," in 3rd IEEE International Conference on Group IV Photonics, 37-39 (2006).
16. (2) in silicon-comparison between theoretical and experimental values," in 6th IEEE International Conference on Group IV Photonics, 232-234 (2009)
17. N. K. Hon, K. K. Tsia, D. R. Solli, B. Jalali, "Periodically-Poled Silicon," Appl. Phys. Lett. 94(9), 091116 (2009).
18. I. DeWolf, "Micro-raman spectroscopy to study local mechanical stress in silicon integrated circuits," Semicond. Sci. Technol. 11(2), 139-154 (1996).
19. C. Y. Peng, C. F. Huang, Y. C. Fu, Y. H. Yang, C. Y. Lai, S. T. Chang, C. W. Liu, "Comprehensive study of the raman shifts of strained silicon and germanium," J. Appl. Phys. 105(8), 083537 (2009).
20. M. Wächter, C. Matheisen, M. Waldow, T. Wahlbrink, J. Bolten, M. Nagel, H. Kurz, "Optical generation of terahertz and second-harmonic light in plasma-activated silicon nanophotonic structures," Appl. Phys. Lett. 97(16), 161107 (2010).