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Volumn 519, Issue 21, 2011, Pages 7579-7582
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Fluorine doped ZnO thin films by RF magnetron sputtering
a
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Author keywords
Fluorine doping; Magnetron sputtering; Optical and electrical characterisation; Zinc oxide
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Indexed keywords
AMBIENTS;
BAND-GAP VALUES;
BURSTEIN-MOSS SHIFT;
DOPED FILMS;
ELECTRICAL CHARACTERISATION;
FLUORINE DOPING;
FLUORINE-DOPED ZNO;
HOLE EFFECTIVE MASS;
PARABOLIC BAND MODEL;
REACTIVE GAS;
RF-MAGNETRON SPUTTERING;
RF-SPUTTERING;
SPUTTERING POWER;
SUBSTRATE TEMPERATURE;
TOTAL PRESSURE;
VISIBLE RANGE;
YIELD VALUE;
ZNO;
ZNO FILMS;
ARGON;
FLUORINE;
MAGNETRON SPUTTERING;
METALLIC FILMS;
TABLE LOOKUP;
ZINC OXIDE;
SEMICONDUCTOR DOPING;
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EID: 80052146336
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.126 Document Type: Conference Paper |
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Times cited : (20)
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References (14)
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