Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping

Energy Procedia

Volumn 8, Issue , 2011, Pages 337-342

  Müller, Jens ^a   Bothe, Karsten ^a   Gatz, Sebastian ^a   Plagwitz, Heiko ^b   Schubert, Gunnar ^b   Brendel, Rolf ^a,c  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b Sunways AG   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Carrier lifetime; Laser ablation; Local back surface field; Silicon solar cells

Indexed keywords

ABLATION; ALUMINUM; ALUMINUM ALLOYS; CARRIER LIFETIME; CHARGE CARRIERS; LASER ABLATION; MAPPING; POINT CONTACTS; SCREEN PRINTING; SILICON; SOLAR CELLS;

CHARGE CARRIER RECOMBINATION; CONTACT GEOMETRY; CONTACT RECOMBINATIONS; DIELECTRIC STACK; FLOAT ZONE SILICON; LIFETIME MAPPING; LOCAL BACK SURFACE FIELDS; REVERSE-SATURATION CURRENTS;

SILICON SOLAR CELLS;

EID: 80052103778     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.146     Document Type: Conference Paper

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