Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

  Steenbergen, E H ^a   Huang, Y ^b   Ryou, J H ^b   Ouyang, L ^a,c   Li, J J ^a   Smith, D J ^a,c   Dupuis, R D ^b   Zhang, Y H ^a  

^a Arizona State University   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINITIES; FULL WIDTH HALF MAXIMUM; INAS; LOW TEMPERATURE PHOTOLUMINESCENCE; OPTICAL CHARACTERIZATION; PHOTOCONDUCTANCE; PHOTORESPONSES; SATELLITE PEAKS; SPECTRAL RESPONSE; STRAIN-BALANCED; SUPERLATTICE PERIODICITY;

ANTIMONY; GALLIUM ALLOYS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 80052101281     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3625429     Document Type: Article

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