Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

Proceedings of the IEEE

Volumn 97, Issue 6, 2009, Pages 1056-1066

  Razeghi, Manijeh ^a   Hoffman, Darin ^a   Nguyen, Binh Minh ^a   Delaunay, Pierre Yves ^a   Huang, Edward Kwei Wei ^a   Tidrow, Meimei Z ^b   Nathan, Vaidya ^c  

^a Northwestern University   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Focal plane array; GaSb; InAs; Infrared; Two color; Type II

Indexed keywords

CADMIUM ALLOYS; FOCAL PLANE ARRAYS; FOCUSING; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INFRARED RADIATION; MERCURY AMALGAMS; PASSIVATION; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR ALLOYS; STRUCTURAL DESIGN;

DIFFERENTIAL RESISTANCES; GASB; HIGH QUANTUM EFFICIENCY; INAS; INAS/GASB SUPERLATTICES; TWO-COLOR; TYPE II; VERY LONG WAVELENGTH INFRARED;

QUANTUM EFFICIENCY;

EID: 67349231203     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2017108     Document Type: Article

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