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Volumn 99, Issue 7, 2011, Pages

The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1-x thin films

(5) Pichanusakorn, P a Kuang, Y J b Patel, C J a Tu, C W c Bandaru, P R a,c

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; DOPANT TYPE; EFFECTIVE MASS; EXPERIMENTAL INVESTIGATIONS; GAAS; RESONANT STATE;

DOPING (ADDITIVES); ELECTRON MOBILITY; GALLIUM NITRIDE; PASSIVATION;

CARRIER CONCENTRATION;

EID: 80052089591 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626041 Document Type: Article

Times cited : (13)

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