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Volumn 97, Issue 15, 2010, Pages

Room-temperature photoresponse of Schottky photodiodes based on GaN xAs1-x synthesized by ion implantation and pulsed-laser melting

(6) Yi, Wei a,b Kim, Taeseok a,c Shalish, Ilan a Loncar, Marko a Aziz, Michael J a Narayanamurti, Venkatesh a

a HARVARD UNIVERSITY (United States)

b HEWLETT PACKARD LABORATORIES (United States)

c SunPower Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON EMISSION MICROSCOPY; BAND ANTI-CROSSING MODELS; CONCENTRATION DEPENDENCE; LASER MELTING; PHOTOMODULATED REFLECTANCE; PHOTORESPONSES; RED SHIFT; ROOM TEMPERATURE; SCHOTTKY PHOTODIODES; SPECTRAL RESPONSIVITY;

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; ION IMPLANTATION; PHOTODIODES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

PULSED LASERS;

EID: 77958102914 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3500981 Document Type: Article

Times cited : (1)

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