Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Gerlich, L ^a   Ohsiek, S ^b   Klein, C ^b   Geiss M ^b   Friedemann, M ^b   Kucher P ^a   Schmeisser D ^c  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b GLOBALFOUNDRIES   (Germany)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

300 MM WAFERS; ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; BLANKET WAFERS; DEPOSITION POWER; DOUBLE LAYERS; HIGH-PERFORMANCE CMOS; LOW RESISTIVITY; NITROGEN CONTENT; NITROGEN FLOW; SINGLE LAYER; TECHNOLOGY NODES; TEST STRUCTURE; ULTRA-THIN;

METALLIZING; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS;

GROWTH (MATERIALS);

EID: 80052076962     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940322     Document Type: Conference Paper

References (8)

1. F. Roccaforte, F. La Via, V. Raineri, International Journal of High Speed Electronics and Systems, Vol. 15, No. 4, 2005, pp. 781-82O.
2. B. Barda, P. Machác, S. Cichon, V. Machovic, M. Kudrnová, A. Michalcová, J. Siegel, Applied Surface Science, Vol. 257, No. 2, 2010, pp. 414-422.
3. T. Nakamura, M. Satoh, Solid-State Electronics, Vol. 46, No. 12, 2002, pp. 2063-2067.
4. O.J. Guy, G. Pope, I. Blackwood, K.S. Teng, W.Y. Lee, S.P. Wilks, P.A. Mawby, Materials Science Forum, Vols. 457-460, 2004, pp. 853-856.
5. M.H. Ervin, K.A. Jones, U. Lee, M.C. Wood, Journal of Vacuum Science and Technology B, Vol. 24, No. 3, 2006, pp. 1185-1189.
6. Z. Liliental-Weber, Journal of Vacuum Science and Technology B, Vol. 5, No. 4, 1987, pp. 1007-1014.
7. H. Guo, Q. Feng, D. Qiao, Y. Zhang, Y. Zhang, Proceedings of SPIE, Sixth International Conference on Thin Film Physics and Applications, Vol. 6984, 2008, pp. 69843F-1-69843F-4.
8. A.E. Nomura, S.K. Kurinec, R. Raffaelle, Symposium Proceedings, International Semiconductor Device Research Symposium, 2001, pp. 523-526.