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Volumn 457-460, Issue II, 2004, Pages 853-856

The formation of low resistance Ohmic contacts to 4H-SiC, circumventing the need for post annealing, studied by specific contact resistance measurements and X-ray photoelectron spectroscopy

Author keywords

Contacts; Nickel; Ohmic; SiC; Silicon Carbide; Suicide; XPS

Indexed keywords

ANNEALING; BINDING ENERGY; METALLIZING; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON WAFERS; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 8744264059     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.853     Document Type: Conference Paper
Times cited : (3)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.