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Volumn 457-460, Issue II, 2004, Pages 853-856
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The formation of low resistance Ohmic contacts to 4H-SiC, circumventing the need for post annealing, studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
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Author keywords
Contacts; Nickel; Ohmic; SiC; Silicon Carbide; Suicide; XPS
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Indexed keywords
ANNEALING;
BINDING ENERGY;
METALLIZING;
PHOTOLITHOGRAPHY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON CARBIDE;
SILICON WAFERS;
SURFACE CHEMISTRY;
X RAY PHOTOELECTRON SPECTROSCOPY;
CIRCULAR TRANSFER LENGTH MEASUREMENTS (CTLM);
CONTACT RESISTANCE;
LOW RESISTANCE OHMIC CONTACTS;
SILICON INTERLAYER PRETREATMENT (SIP);
OHMIC CONTACTS;
ANNEALING;
CONTACTING;
LITHOGRAPHY;
METALIZATION;
SILICON CARBIDE;
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EID: 8744264059
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.853 Document Type: Conference Paper |
Times cited : (3)
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References (6)
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