The simplest modification of Cu diffusion barrier dielectrics to improve Cu/low-k interconnects reliability

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Goto, Kinya ^a   Oka, Yoshihiro ^a   Suzumura, Naohito ^a   Shibata, Ryuji ^a   Furuhashi, Takahisa ^a   Matsumoto, Masahiro ^a   Kawamura, Takeshi ^a   Matsuura, Masazumi ^a   Fujisawa, Masahiko ^a   Asai, Koyu ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLICATED SYSTEMS; CU DIFFUSION BARRIER; CU/LOW-K INTERCONNECTS; DEPOSITION SYSTEMS; HERMETICITY; HIGH RELIABILITY; SOURCE GAS; TEST PROCEDURES;

DIELECTRIC MATERIALS; INTERDIFFUSION (SOLIDS); METALLIZING; SURFACE CHEMISTRY; TESTING; THERMAL DESORPTION; THERMAL DESORPTION SPECTROSCOPY;

RELIABILITY;

EID: 80052064740     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940357     Document Type: Conference Paper

References (5)

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5. C. H. Kim, I. C. Rho. et al., Journal of the Electrochemical Soc., 156, H685-689 (2009).