Thermal stability of copper through-silicon via barriers during IC processing

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Civale, Yann ^a   Croes, Kristof ^a   Miyamori, Yuichi ^b   Thangaraju, Sarasvathi ^a   Redolfi, Augusto ^a   Van Ammel, Annemie ^a   Velenis, Dimitrios ^a   Cherman, Vladimir ^a   Hendrickx, Paul ^a   Van Der Plas, Geert ^a   Cockburn, Andrew ^c   Gravey, Virginie ^c   Kumar, Nirajan ^c   Cao, Zhitao ^c   Tezcan, Deniz S ^a   Soussan, Philippe ^a   Travaly, Youssef ^a   Tokei, Zsolt ^a   Beyne, Eric ^a   Swinnen, Bart ^a  

^a IMEC   (Belgium)

^b SONY CORPORATION   (Japan)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; BACK-END-OF-LINE INTERCONNECT; CMOS WAFERS; CU DIFFUSION; DEVICE PERFORMANCE; DEVICE WAFERS; FRONT-END-OF-LINE PROCESS; HIGH-TEMPERATURE PROCESSING; PROCESS FLOWS; SILICON SUBSTRATES; THERMALLY STABLE; THROUGH-SI VIA; WORK FOCUS;

METALLIZING; SILICON WAFERS; SINTERING; THREE DIMENSIONAL;

THERMODYNAMIC STABILITY;

EID: 80052047571     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940352     Document Type: Conference Paper

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