γ Radiation caused graphene defects and increased carrier density

Chinese Physics B

Volumn 20, Issue 8, 2011, Pages

  Han, Mai Xing ^a   Ji, Zhuo Yu ^a   Shang, Li Wei ^a   Chen, Ying Ping ^a   Wang, Hong ^a   Liu, Xin ^a   Li, Dong Mei ^a   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

ray radiation; defects; grapheme; Raman spectrum

Indexed keywords

BAND POSITION; BI-LAYER; CRYSTAL LATTICE DEFORMATION; DC ELECTRICAL; GRAPHEME; GRAPHENE DEVICES; LAYER NUMBER; MICRO-RAMAN INVESTIGATIONS; RADIATION ENVIRONMENTS; RADIATION EXPOSURE; RAMAN SPECTRUM; RAY RADIATION;

CARRIER CONCENTRATION; DEFECTS; ELECTRIC PROPERTIES; RAMAN SPECTROSCOPY;

GRAPHENE;

EID: 80051899725     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/8/086102     Document Type: Article

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