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Volumn 509, Issue 38, 2011, Pages 9302-9306
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Structural and dielectric properties of Bi2Zn 2/3Nb4/3O7 thin films prepared by pulsed laser deposition at low temperature for embedded capacitor applications
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Author keywords
Bi2Zn2 3Nb4 3O7 thin films; Dielectric properties; Low temperature; Pulsed laser deposition
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Indexed keywords
AMORPHOUS THIN FILMS;
APPLIED BIAS;
CURRENT CHARACTERISTIC;
CURRENT PROPERTIES;
EMBEDDED CAPACITOR;
HIGH BREAKDOWN;
HIGH DIELECTRIC CONSTANTS;
HIGH-RESOLUTION TEM;
LOSS TANGENT;
LOW TEMPERATURE;
LOW TEMPERATURES;
OXYGEN PRESSURE;
POST-ANNEALING TEMPERATURE;
POTENTIAL MATERIALS;
RAPID THERMAL PROCESS;
ROOM TEMPERATURE;
AMORPHOUS FILMS;
ANNEALING;
CAPACITORS;
DEPOSITION;
DIELECTRIC PROPERTIES;
DIFFRACTION;
LEAKAGE CURRENTS;
OXYGEN;
PULSED LASER DEPOSITION;
PULSED LASERS;
RAPID THERMAL PROCESSING;
SILICON COMPOUNDS;
THIN FILMS;
ZINC;
VAPOR DEPOSITION;
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EID: 80051885979
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2011.06.120 Document Type: Article |
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Times cited : (14)
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References (14)
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