Aqueous solutions for low-temperature photoannealing of functional oxide films: Reaching the 400 °c si-technology integration barrier

Journal of the American Chemical Society

Volumn 133, Issue 33, 2011, Pages 12922-12925

  De Dobbelaere, Christopher ^a   Calzada, Maria Lourdes ^b   Jiménez, Ricardo ^b   Ricote, Jesús ^b   Bretos, Iñigo ^b   Mullens, Jules ^a   Hardy, An ^a   Van Bael, Marlies K ^a  

^a HASSELT UNIVERSITY   (Belgium)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; AQUEOUS PRECURSOR; ENVIRONMENTALLY-FRIENDLY; FERROELECTRIC PEROVSKITES; FUNCTIONAL OXIDE FILMS; LOW TEMPERATURES; LOW-TEMPERATURE FABRICATION; MODEL SYSTEM; MULTIFERROICS; MULTIMETAL OXIDE; SI-TECHNOLOGY; SOLUTION DEPOSITION;

FERROELECTRIC FILMS; FILM PREPARATION; PEROVSKITE;

OXIDE FILMS;

METAL OXIDE; OXIDE; PEROVSKITE; SILICONE;

AQUEOUS SOLUTION; ARTICLE; BIOCOMPATIBILITY; BIOTECHNOLOGY; CONTROLLED STUDY; DECOMPOSITION; FILM; FUNCTIONAL OXIDE FILM; LOW TEMPERATURE; NANOFABRICATION; PHOTOANNEALING; PHOTOCHEMISTRY; PHOTOSENSITIZATION; THERMAL ANALYSIS; THERMODYNAMICS; ULTRAVIOLET SPECTROSCOPY;

EID: 80051718525     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja203553n     Document Type: Article

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