SCOPUS 정보 검색 플랫폼

Integrated Ferroelectrics

Volumn 126, Issue 1, 2011, Pages 117-124

Resistive switching of SnO2 thin films on glass substrates

(5) Almeida, Sergio a Aguirre, Brandon a Marquez, Noel a McClure, John b Zubia, David a

a 500 W University Avenue (United States)

b UNIVERSITY OF TEXAS AT EL PASO (United States)

Author keywords

Memristor; ReRAM; resistive switching

Indexed keywords

COMPLIANCE CURRENT; FORMING MECHANISM; GLASS SUBSTRATES; MEMORY ANALYSIS; MEMRISTOR; OHMIC CONDUCTION; POOLE-FRANKEL; RERAM; RESET VOLTAGE; RESISTIVE SWITCHING; RF MAGNETRON REACTIVE SPUTTERING; ROOM TEMPERATURE; SCHOTTKY EMISSIONS; SNO2 THIN FILMS; SPACE-CHARGE-LIMITED; STRUCTURAL CHANGE; TOP CONTACT; UNIPOLAR SWITCHING;

CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC MATERIALS; FERROELECTRICITY; GLASS; MAGNETRONS; MEMS; PIEZOELECTRIC DEVICES; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; SUBSTRATES; SWITCHING SYSTEMS; THIN FILMS;

SWITCHING;

EID: 80051702028 PISSN: 10584587 EISSN: 16078489 Source Type: Journal
DOI: 10.1080/10584587.2011.575015 Document Type: Conference Paper

Times cited : (17)

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