Light-extraction enhancement of large-area GaN-based LEDs with electrochemically grown ZnO nanorod arrays

IEEE Photonics Technology Letters

Volumn 23, Issue 17, 2011, Pages 1204-1206

  Lee, Hee Kwan ^a   Kim, Myung Sub ^a   Yu, Jae Su ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Electrochemical deposition; GaN based light emitting diodes (LEDs); light extraction; zinc oxide (ZnO) nanorods

Indexed keywords

AL-DOPED ZNO; BLUE LIGHT-EMITTING; ELECTROCHEMICAL DEPOSITION; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; HIGH TRANSMITTANCE; INDIUM TIN OXIDE; INGAN/GAN; INTERNAL REFLECTIONS; LIGHT EXTRACTION; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; SEED LAYER; WELL-ALIGNED; ZINC OXIDE NANOROD ARRAYS; ZNO; ZNO NANOROD ARRAYS;

ELECTRODEPOSITION; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANORODS; REDUCTION; TIN; ZINC; ZINC OXIDE;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 80051690455     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2158092     Document Type: Article

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