Light output enhancement of GaN-based light-emitting diodes using ZnO nanorod arrays produced by aqueous solution growth technique

IEEE Photonics Technology Letters

Volumn 22, Issue 16, 2010, Pages 1220-1222

  Dalui, Saikat ^a   Lin, Chih Chien ^a   Lee, Hsin Ying ^a   Chao, Chia Hsin ^b   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Aqueous solution growth techniques; divergence angle; GaN based light emitting diodes (LEDs); ZnO nanorod arrays

Indexed keywords

AQUEOUS SOLUTIONS; DIVERGENCE ANGLE; ELECTRICAL AND OPTICAL PROPERTIES; GAN-BASED LIGHT-EMITTING DIODES; INJECTION CURRENTS; LIGHT OUTPUT; LIGHT OUTPUT ENHANCEMENT; ZNO NANOROD ARRAYS;

DIODES; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; NANORODS; OPTICAL PROPERTIES; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 77954880109     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2052795     Document Type: Article

References (12)

1. C. T. Lee, Y. H. Chou, J. T. Yan, and H. Y. Lee, "Light enhancement of Al nanoclusters embedded in Al-doped ZnO films ofGaN-based lightemitting diodes," J. Vac. Sci. Technol. B, vol.27, pp. 1901-1903, Jul. 2009.
2. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol.84, pp. 855-857, Feb. 2004.
3. X. Guo, Y. L. Li, and E. F. Schubert, "Efficiency of GaN-InGaN lightemitting diodes with interdigitated mesa geometry," Appl. Phys. Lett., vol.79, pp. 1936-1938, Sep. 2001. (Pubitemid 33666247)
4. H. Y. Lee, X. Y. Huang, and C. T. Lee, "Light output enhancement of GaN-based roughened LEDs using bias-assisted photoelectrochemical etching method," J. Electrochem. Soc., vol.155, pp. H707-H709, Aug. 2008.
5. S. J. An, J. H. Chae, G. C. Yi, and G. H. Park, "Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays," Appl. Phys. Lett., vol.92, pp. 121108-1-121108-3, Mar. 2008.
6. J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, "Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency," Appl. Phys. Lett., vol.90, pp. 203515-1-203515-3, May 2007.
7. D. B. Thompson, J. J. Richardson, S. P. DenBaars, and F. F. Lange, "Light emitting diodes with ZnO current spreading layers deposited from a low temperature aqueous solution," Appl. Phys. Exp., vol.2, pp. 042101-1-042101-3, Mar. 2009.
8. M. K. Lee, C. L. Ho, and P. C. Chen, "Light extraction efficiency enhancement of GaN blue LED by liquid-phase-deposited ZnO rods," IEEE Photon. Technol. Lett., vol.20, no.4, pp. 252-254, Feb. 15, 2008.
9. K. K. Kim, S. D. Lee, H. Kim, J. C. Park, S. N. Lee, Y. Park, S. J. Park, and S. W. Kim, "Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution," Appl. Phys. Lett., vol.94, pp. 071118-1-071118-3, Feb. 2009.
10. H. Y. Lee, K. H. Pan, C. C. Lin, Y. C. Chang, F. J. Kuo, and C. T. Lee, "Current spreading of III-nitride light-emitting diodes using plasma treatment," J. Vac. Sci. Technol. B, vol.25, pp. 1280-1283, Jul. 2007.
11. P. S. Chen, C. S. Lee, J. T. Yan, and C. T. Lee, "Performance improvement and mechanism of chlorine-treated InGaN-GaN light-emitting diodes," Electrochem. Solid State Lett., vol.10, pp. H165-H167, Mar. 2007.
12. I. Moreno and C. C. Sun, "Modeling the radiation pattern of LEDs," Opt. Express, vol.16, pp. 1808-1819, Jan. 2008.