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Volumn 54, Issue 8, 2011, Pages 2123-2129

Study on PECVD SiO2/Si3N4 double-layer electrets with different thicknesses

Author keywords

electrets; PECVD; thicknesses

Indexed keywords

ELECTRETS; GLASS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON OXIDES; STABILITY; SUBSTRATES; SURFACE POTENTIAL; THERMOOXIDATION;

EID: 80051601022     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-011-4423-z     Document Type: Article
Times cited : (7)

References (15)
  • 4
    • 0033337996 scopus 로고    scopus 로고
    • Charge storage in double layers of thermally grown silicon dioxide and APCVD silicon nitride
    • DOI 10.1109/94.822027
    • H. Amjadi 1999 Charge storage in double layers of thermally grown silicon dioxide and APCVD silicon nitride IEEE Trns Dielectr Electr Insul 6 852 857 10.1109/94.822027 (Pubitemid 30552517)
    • (1999) IEEE Transactions on Dielectrics and Electrical Insulation , vol.6 , Issue.6 , pp. 852-857
    • Amjadi, H.1
  • 6
    • 0026903185 scopus 로고
    • On the charge storage and decay mechanism in silicon dioxide electrets
    • 10.1109/14.155784
    • W. Olthuis P. Bergveld 1992 On the charge storage and decay mechanism in silicon dioxide electrets IEEE Trns Electr Insul 27 691 10.1109/14.155784
    • (1992) IEEE Trns Electr Insul , vol.27 , pp. 691
    • Olthuis, W.1    Bergveld, P.2
  • 7
    • 0030217508 scopus 로고    scopus 로고
    • Silicon-based inorganic electrets for application in micromachined devices
    • 10.1109/94.536727
    • H. Amjadi C. Thielemann 1996 Silicon-based inorganic electrets for application in micromachined devices IEEE Trns Dielectr Electr Insul 3 494 10.1109/94.536727
    • (1996) IEEE Trns Dielectr Electr Insul , vol.3 , pp. 494
    • Amjadi, H.1    Thielemann, C.2
  • 8
    • 49449095309 scopus 로고    scopus 로고
    • PECVD SiO2/Si3N4 double layers electrets on glass substrate
    • 10.1109/TDEI.2008.4591210
    • Z. Chen Z. Lv J. Zhang 2008 PECVD SiO2/Si3N4 double layers electrets on glass substrate IEEE Trns Dielectr Electr Insul 15 915 10.1109/TDEI.2008.4591210
    • (2008) IEEE Trns Dielectr Electr Insul , vol.15 , pp. 915
    • Chen, Z.1    Lv, Z.2    Zhang, J.3
  • 11
    • 0032626518 scopus 로고    scopus 로고
    • Investigations on charge storage and transport in plasmadeposited inorganic electrets
    • 10.1109/94.765914
    • H. Amjadi 1999 Investigations on charge storage and transport in plasmadeposited inorganic electrets IEEE Trns Dielectr Electr Insul 6 236 10.1109/94.765914
    • (1999) IEEE Trns Dielectr Electr Insul , vol.6 , pp. 236
    • Amjadi, H.1
  • 12
    • 0017518679 scopus 로고
    • Effect of adsorbed gases on surface conductivity of quartz
    • 10.1063/1.324108
    • A. D. Martin K. J. Mclean 1977 Effect of adsorbed gases on surface conductivity of quartz J Appl Phys 48 2950 10.1063/1.324108
    • (1977) J Appl Phys , vol.48 , pp. 2950
    • Martin, A.D.1    McLean, K.J.2
  • 13
    • 0015601007 scopus 로고
    • High electric fields in silicon dioxide produced by corona charging
    • 10.1063/1.1662300
    • R. Williams M. H. Woods 1973 High electric fields in silicon dioxide produced by corona charging J Appl Phys 44 1026 10.1063/1.1662300
    • (1973) J Appl Phys , vol.44 , pp. 1026
    • Williams, R.1    Woods, M.H.2
  • 14
    • 0014926483 scopus 로고
    • The metal-nitride-oxide-silicon (MNOS) transistor
    • D. Frohman-Bentchkowsky 1970 The metal-nitride-oxide-silicon (MNOS) transistor IEEE Proc Charact Appl 58 1207
    • (1970) IEEE Proc Charact Appl , vol.58 , pp. 1207
    • Frohman-Bentchkowsky, D.1
  • 15
    • 0014438345 scopus 로고
    • Charge storage model for variable threshold FET memory element
    • 10.1063/1.1652705
    • F. A. Sewell, et al. 1969 Charge storage model for variable threshold FET memory element Appl Phys Lett 14 45 10.1063/1.1652705
    • (1969) Appl Phys Lett , vol.14 , pp. 45
    • Sewell, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.