Charge storage characteristics of SiO2/Si3N 4 double layer electret

Proceedings of the 2004 IEEE International Conference on Solid Dielectrics ICSD 2004

Volumn 1, Issue , 2004, Pages 170-173

  Hong, Nung Pyo ^a   Hong, Jin Woong ^b  

^a Fairchild Korea Semiconductor Ltd   (South Korea)

^b Catholic Kwandong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; COMPUTER SIMULATION; DOSIMETRY; ELECTRIC CHARGE; ELECTRIC ENERGY STORAGE; SEMICONDUCTOR DEVICES; SILICA; SILICON NITRIDE;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); ELECTRET MATERIALS; SEMICONDUCTOR DEVICE SIMULATION TOOLS; SURFACE CONDUCTION;

ELECTRETS;

EID: 15844413798     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. H. Amjadi, "Charge storage in double layers of thermally grown silicon dioxide and APCVD silicon nitride", IEEE Transactions on the Electrical Insulation, vol. 6, pp. 852-857, December 1999
2. R. Kressmann, G. M. Sessler, P. Gunther, "Electret," Spinger, Berlin, pp. 1-11, 1987.
3. th International Symposium in Electret ISE8, Paris, pp. 949-954, 1994.
4. Nung-Pyo Hong, Doo-Jin Choi, Tae-Sun Lee, Byung-Ha Choi, Tae-Hoon Kim, Jin-Woong Hong "The electrical characteristics of oxide due to processing condition", in Proceedings of IEEE ICSD2001 Conference, Eindhoven, Netherlands, pp. 211-214, 2001.
5. th International Symposium on Electret ISE10, pp.391-394, 1999.
6. W. Olthuis, P. Bergveld, "On the charge storage and decay mechanism in silicon dioxide", IEEE Transations on Electrical Insulation, vol.27, No.4, pp. 691-697, 1992.
7. M.Copel, P.R.Varekamp, D.W.Kisker, F.R.McFeely, "Nucleation of chemical vapor deposition silicon nitride on silicon dioxide", Applied Physics Letters, vol.74, pp.1830-1832, March 1999.