Lift-off process reducing crack formation and its Cu(In,Ga)Se2 thin film solar cell applications

Solar Energy

Volumn 85, Issue 9, 2011, Pages 2101-2107

  Abe, Yasuhiro ^a   Minemoto, Takashi ^a   Osada, Shintaro ^a   Takakura, Hideyuki ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Crack; Cu(In,Ga)Se2; Layer transfer; Lift off process; Thin film solar cell

Indexed keywords

ABSOLUTE VALUES; BACK ELECTRODE; CIGS SOLAR CELLS; CU(IN , GA)SE; CU(IN,GA)SE2; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DIODE PARAMETERS; DOMINANT FACTOR; EFFICIENCY IMPROVEMENT; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; FILM HARDNESS; HIGH FILLS; IDEALITY FACTORS; LAYER TRANSFER; LIFT-OFF PROCESS; REDUCTION METHOD; SATURATION CURRENT DENSITIES; SERIES RESISTANCES; SOLAR CELL FABRICATION; SOLAR CELL PARAMETERS; SOLAR CELL PERFORMANCE; THIN FILM SOLAR CELL; THIN FILM SOLAR CELLS; TRANSFERRED LAYER;

CONVERSION EFFICIENCY; COPPER; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; FILM THICKNESS; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

CRACKS;

CRACK; ELECTRODE; HARDNESS; MOLYBDENUM; SOLAR POWER; SPATIAL DISTRIBUTION;

EID: 80051599304     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2011.05.018     Document Type: Article

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