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Volumn 50, Issue 4 PART 1, 2011, Pages

Origin of crossover in current density-voltage characteristics of Cu(In,Ga)Se2 thin film solar cell fabricated using lift-off process

(3) Abe, Yasuhiro a Minemoto, Takashi a Takakura, Hideyuki a

a RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP STRUCTURE; CROSSOVER BEHAVIOR; CU(IN , GA)SE; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; FORWARD BIAS; LIFT-OFF PROCESS; QUASI-ELECTRIC FIELD; THIN FILM SOLAR CELLS;

BIAS VOLTAGE; ELECTRIC FIELDS; ENERGY GAP; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955148268 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.040201 Document Type: Article

Times cited : (5)

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