Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

Thin Solid Films

Volumn 519, Issue 20, 2011, Pages 6868-6871

  Huh, Jun Young ^a   Jeon, Jae Hong ^a   Choe, Hee Hwan ^a   Lee, Kang Woong ^a   Seo, Jong Huyn ^a   Ryu, Min Ki ^b   Park, Sang Hee Ko ^b   Hwang, Chi Sun ^b   Cheong, Woo Seok ^b  

^a Hankuk Aviation University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Compositional ratio; IGZO; r.f. sputtering; Stability

Indexed keywords

ACTIVE LAYER; COMPOSITIONAL RATIO; DEVICE STABILITY; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GA CONTENT; IGZO; INDIUM GALLIUM ZINC OXIDES; R.F. SPUTTERING; SPUTTERING TARGET;

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRIC FIELD EFFECTS; GALLIUM; INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; STABILITY; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 80051548565     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.400     Document Type: Conference Paper

References (9)

1. J. Wager Science 300 2003 1269
2. S.H.K. Park, C.S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. Lee, K. Lee, M.K. Oh, and S. Im Adv. Mater. 21 2009 678
3. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirao, and H. Hosono Nature 432 2004 488
4. M. Kim, J.H. Jeong, H.J. Lee, T.K. Ahn, H.S. Shin, J.S. Park, J.K. Jeong, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 90 2007 212114
5. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono Appl. Phys. Lett. 90 2007 242114
6. J.K. Jeong, J.H. Jeong, H.W. Yang, J.S. Park, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 91 2007 113505
7. H. Hosono J. Non-Cryst. Solids 352 2006 851
8. K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono Appl. Phys. Lett. 85 2004 1993
9. B. Ryu, H.K. Noh, E.A. Choi, and K.J. Chang Appl. Phys. Lett. 97 2010 022108