-
3
-
-
0031150299
-
-
Davis R.F., Paisley M.J., Sitar Z., Kester D.J., Ailey K.S., Linthicum K., Rowland L.B., Tanaka S., and Kern R.S. J. Cryst. Growth 178 (1997) 87-101
-
(1997)
J. Cryst. Growth
, vol.178
, pp. 87-101
-
-
Davis, R.F.1
Paisley, M.J.2
Sitar, Z.3
Kester, D.J.4
Ailey, K.S.5
Linthicum, K.6
Rowland, L.B.7
Tanaka, S.8
Kern, R.S.9
-
5
-
-
61449102439
-
Review, The Advanced
-
III-Vs Review, The Advanced Semiconductor Magazine 19(9) (2006) 10.
-
(2006)
Semiconductor Magazine
, vol.19
, Issue.9
, pp. 10
-
-
III-Vs1
-
7
-
-
0348010393
-
Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
-
Pearton S.J., Abernathy C.R., Wisk P.W., Hobson W.S., and Ren F. Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation. Appl. Phys. Lett. 63 8 (1993) 1143-1145
-
(1993)
Appl. Phys. Lett.
, vol.63
, Issue.8
, pp. 1143-1145
-
-
Pearton, S.J.1
Abernathy, C.R.2
Wisk, P.W.3
Hobson, W.S.4
Ren, F.5
-
8
-
-
61449206985
-
-
〈http://www.astm.org〉
-
-
-
-
9
-
-
61449086240
-
-
〈http://rredc.nrel.gov/solar/spectra/am1.5〉
-
-
-
-
11
-
-
0014778389
-
Measurement of the ionization rates in diffused silicon PN junctions
-
Van Overstraeten R., and De Man H. Measurement of the ionization rates in diffused silicon PN junctions. Solid-State Electron. 13 (1970) 583-608
-
(1970)
Solid-State Electron.
, vol.13
, pp. 583-608
-
-
Van Overstraeten, R.1
De Man, H.2
-
13
-
-
84916430884
-
A self-consistent scheme for one-dimensional steady state transistor calculations
-
Gummel H.K. A self-consistent scheme for one-dimensional steady state transistor calculations. IEEE Trans. Electron. Devices ED-12 (1964) 455-465
-
(1964)
IEEE Trans. Electron. Devices
, vol.ED-12
, pp. 455-465
-
-
Gummel, H.K.1
-
14
-
-
0021405785
-
Convergence properties of Newton's method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices
-
Akcasu O.E. Convergence properties of Newton's method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices. Solid-State Electron. 27 4 (1984) 319-328
-
(1984)
Solid-State Electron.
, vol.27
, Issue.4
, pp. 319-328
-
-
Akcasu, O.E.1
-
15
-
-
1642634100
-
Detailed analysis of absorption data for indium nitride
-
Butcher K.S.A., Wintrebert-Fouquet M., Chen P.P.-T., Timmers H., and Shrestha S.K. Detailed analysis of absorption data for indium nitride. Mater. Sci. Semicond. Process. 6 (2003) 351-354
-
(2003)
Mater. Sci. Semicond. Process.
, vol.6
, pp. 351-354
-
-
Butcher, K.S.A.1
Wintrebert-Fouquet, M.2
Chen, P.P.-T.3
Timmers, H.4
Shrestha, S.K.5
-
16
-
-
0000060033
-
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
-
Singh R., Doppalapudi D., and Moustakas T.D. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition. Appl. Phys. Lett. 70 9 (1997)
-
(1997)
Appl. Phys. Lett.
, vol.70
, Issue.9
-
-
Singh, R.1
Doppalapudi, D.2
Moustakas, T.D.3
-
17
-
-
0034833175
-
Numerical simulation of the electrical conduction in a PN junction under solar lighting: application to CdZnS(n+)/CdTe(p) heterostructure
-
Joti A., Benamara Z., Bachir Bouiadjra F.S., and Bachir Bouiadjra N. Numerical simulation of the electrical conduction in a PN junction under solar lighting: application to CdZnS(n+)/CdTe(p) heterostructure. Solid State Phenom. 80-81 (2001) 305-310
-
(2001)
Solid State Phenom.
, vol.80-81
, pp. 305-310
-
-
Joti, A.1
Benamara, Z.2
Bachir Bouiadjra, F.S.3
Bachir Bouiadjra, N.4
-
19
-
-
61449159614
-
-
〈http://www.satel-light.com〉.
-
-
-
|