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Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

Gold nanoresistors with near-constant resistivity in the cryogenic-to-room temperature range

(3) Yajadda, M M A a,b Levchenko, I a,b Ostrikov, K a,b

a UNIVERSITY OF SYDNEY (Australia)

b CSIRO (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AU ELECTRODES; CONTROLLABLE SIZE; GOLD FILM; LARGE ARRAYS; METALLIC NANOPARTICLES; NANO-ISLANDS; NANOISLAND; NEAREST NEIGHBOR DISTANCE; NEGATIVE TEMPERATURES; TEMPERATURE COEFFICIENT OF ELECTRICAL RESISTIVITY; TEMPERATURE RANGE; THERMALLY ACTIVATED; VERY LOW TEMPERATURES;

ACTIVATION ENERGY; CRYOGENICS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; FILM THICKNESS; GOLD COATINGS; GOLD DEPOSITS; LASERS; METALLIC FILMS; NANOPARTICLES; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS; VAPOR DEPOSITION;

GOLD;

EID: 79961114594 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3610497 Document Type: Article

Times cited : (18)

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