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Volumn 110, Issue 2, 2011, Pages

Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING STATE; FIELD DISTRIBUTION; NON-VOLATILE; SWITCHING CHARACTERISTICS; THRESHOLD TEMPERATURES;

HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; THRESHOLD VOLTAGE;

METAL INSULATOR TRANSITION;

EID: 79961101638 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3610798 Document Type: Article

Times cited : (3)

References (12)

1
- 0000857055
- 10.1103/RevModPhys.70.1039
- M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998). 10.1103/RevModPhys.70.1039
- (1998) Rev. Mod. Phys. , vol.70 , pp. 1039
- Imada, M.¹ Fujimori, A.² Tokura, Y.³

2
- 79961118463
- Z. Yang, C. Ko, and S. Ramanathan, Annu. Rev. Mater. Res. 41, 8.1 (2011).
- (2011) Annu. Rev. Mater. Res. , vol.41 , pp. 81
- Yang, Z.¹ Ko, C.² Ramanathan, S.³

3
- 3042581419
- 10.1088/1367-2630/6/1/052
- H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, New J. Phys. 6, 52 (2004). 10.1088/1367-2630/6/1/052
- (2004) New J. Phys. , vol.6 , pp. 52
- Kim, H.-T.¹ Chae, B.-G.² Youn, D.-H.³ Maeng, S.-L.⁴ Kim, G.⁵ Kang, K.-Y.⁶ Lim, Y.-S.⁷

4
- 0003737596
- 10.1016/0022-4596(91)90077-U
- P. Lacorre, J. B. Torrance, J. Pannetier, A. I. Nazzal, P. W. Wang, and T. C. Huang, J. Solid State Chem. 91, 225 (1991). 10.1016/0022-4596(91)90077-U
- (1991) J. Solid State Chem. , vol.91 , pp. 225
- Lacorre, P.¹ Torrance, J.B.² Pannetier, J.³ Nazzal, A.I.⁴ Wang, P.W.⁵ Huang, T.C.⁶

5
- 78651289434
- 10.1063/1.3536486
- S. D. Ha, G. H. Aydogdu, and S. Ramanathan, Appl. Phys. Lett. 98, 012105 (2011). 10.1063/1.3536486
- (2011) Appl. Phys. Lett. , vol.98 , pp. 012105
- Ha, S.D.¹ Aydogdu, G.H.² Ramanathan, S.³

6
- 78649758514
- 10.1103/PhysRevB.82.205101
- Z. Yang, C. Ko, V. Balakrishnan, G. Gopalakrishnan, and S. Ramanathan, Phys. Rev. B 82, 205101 (2010). 10.1103/PhysRevB.82.205101
- (2010) Phys. Rev. B , vol.82 , pp. 205101
- Yang, Z.¹ Ko, C.² Balakrishnan, V.³ Gopalakrishnan, G.⁴ Ramanathan, S.⁵

7
- 77955778611
- 10.1063/1.3456446
- A. Podpirka, B. Viswanath, and S. Ramanathan, J. Appl. Phys. 108, 024106 (2010). 10.1063/1.3456446
- (2010) J. Appl. Phys. , vol.108 , pp. 024106
- Podpirka, A.¹ Viswanath, B.² Ramanathan, S.³

8
- 1142292365
- 10.1063/1.1637935
- D.-H. Youn, J.-W. Lee, B.-G. Chae, H.-T. Kim, S.-L. Maeng, and K.-Y. Kang, J. Appl. Phys. 95, 1407 (2004). 10.1063/1.1637935
- (2004) J. Appl. Phys. , vol.95 , pp. 1407
- Youn, D.-H.¹ Lee, J.-W.² Chae, B.-G.³ Kim, H.-T.⁴ Maeng, S.-L.⁵ Kang, K.-Y.⁶

9
- 79956019110
- 10.1063/1.1446215
- Y. Muraoka and Z. Hiroi, Appl. Phys. Lett. 80, 583 (2002). 10.1063/1.1446215
- (2002) Appl. Phys. Lett. , vol.80 , pp. 583
- Muraoka, Y.¹ Hiroi, Z.²

10
- 79956054467
- 10.1063/1.1480475
- A. Tiwari, C. Jin, and J. Narayan, Appl. Phys. Lett. 80, 4039 (2002). 10.1063/1.1480475
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4039
- Tiwari, A.¹ Jin, C.² Narayan, J.³

11
- 58149149491
- 10.1063/1.3050464
- C. Ko and S. Ramanathan, Appl. Phys. Lett. 93, 252101 (2008). 10.1063/1.3050464
- (2008) Appl. Phys. Lett. , vol.93 , pp. 252101
- Ko, C.¹ Ramanathan, S.²

12
- 48249110699
- 10.1103/PhysRevLett.101.026404
- A. Sharoni, J. G. Ramrez, and I. K. Schuller, Phys. Rev. Lett. 101, 026404 (2008). 10.1103/PhysRevLett.101.026404
- (2008) Phys. Rev. Lett. , vol.101 , pp. 026404
- Sharoni, A.¹ Ramrez, J.G.² Schuller, I.K.³

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