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Volumn 95, Issue 3, 2004, Pages 1407-1411
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Growth optimization and electrical characteristics of VO2 films on amorphous SiO2/Si substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRON DEVICE MANUFACTURE;
FILM GROWTH;
LATTICE CONSTANTS;
METAL INSULATOR TRANSITION;
OPTIMIZATION;
PULSED LASER DEPOSITION;
TRANSMISSION ELECTRON MICROSCOPY;
VANADIUM COMPOUNDS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ABRUPT CURRENT JUMP;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
SOURCE DRAIN VOLTAGE;
TERMINAL DEVICE;
VANADIUM OXIDES;
THIN FILMS;
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EID: 1142292365
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1637935 Document Type: Article |
Times cited : (46)
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References (15)
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