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Volumn 99, Issue 4, 2011, Pages

High sensitivity AlGaN/GaN field effect transistor protein sensors operated in the subthreshold regime by a control gate electrode

(6) Wen, Xuejin a Gupta, Samit a Wang, Yuji a Nicholson III, Theodore R a Lee, Stephen C a,b Lu, Wu a,c

a The Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

c Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3-AMINOPROPYLTRIETHOXYSILANE; ACTIVE AREA; ALGAN/GAN; CHANNEL CURRENTS; CONTROL ELECTRODE; CONTROL GATES; CURRENT CHANGE; FIELD EFFECT TRANSISTOR BIOSENSORS; FUNCTIONALIZED; GATE VOLTAGES; HIGH SENSITIVITY; LINEAR REGIME; LOGARITHMIC RELATIONSHIP; PHOSPHATE BUFFERED SALINE SOLUTIONS; PROTEIN SENSOR; SIDE EFFECT; STREPTAVIDIN; STREPTAVIDIN DETECTION; SUBTHRESHOLD;

BIOSENSORS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; PLATINUM; PROTEINS; SILICON COMPOUNDS;

ELECTROCHEMICAL ELECTRODES;

EID: 79961060998 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3600063 Document Type: Article

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.