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Volumn 35, Issue 6, 2011, Pages 47-51
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Growth and characterization of p-InGaN/i-InGaN/n-GaN double heterojunction solar cell on pattern sapphire substrates
a b b c a a |
Author keywords
[No Author keywords available]
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Indexed keywords
HETEROJUNCTIONS;
III-V SEMICONDUCTORS;
LIGHT ABSORPTION;
LIGHT SCATTERING;
OPEN CIRCUIT VOLTAGE;
SAPPHIRE;
SOLAR CELLS;
TEXTURES;
WIDE BAND GAP SEMICONDUCTORS;
DOUBLE HETEROJUNCTIONS;
HETEROJUNCTION STRUCTURES;
P-INGAN;
PATTERN SAPPHIRE;
SAPPHIRE SUBSTRATES;
TEXTURED SURFACE;
SUBSTRATES;
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EID: 79960781156
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.3570845 Document Type: Conference Paper |
Times cited : (2)
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References (9)
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