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Volumn , Issue , 2009, Pages 47-50

60 GHz wide-band power amplifier

Author keywords

60 GHz; PA; SiGe HBT technology; Wireless communications

Indexed keywords

1-DB GAIN COMPRESSION POINT; CASCODE TOPOLOGY; CONSTANT GAIN; FULLY INTEGRATED; GAIN BANDWIDTH; HIGH LINEARITY; POWER-ADDED EFFICIENCY; SIGE-HBT TECHNOLOGY; SIGE:C BICMOS TECHNOLOGY; SINGLE STAGE; SMALL SIGNAL GAIN; WIDE-BAND; WIRELESS COMMUNICATIONS;

EID: 72449201643     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2009.5314150     Document Type: Conference Paper
Times cited : (8)

References (12)
  • 2
    • 30944433621 scopus 로고    scopus 로고
    • t = 350/300 GHz and gate delay below 3.3 ps
    • Dec
    • t = 350/300 GHz and gate delay below 3.3 ps", IEEE IEDM, Dec. 2004.
    • (2004) IEEE IEDM
    • Khater, M.1    et., al.2
  • 3
    • 40549103840 scopus 로고    scopus 로고
    • Van-Hoang Do; Subramanian, V.; Keusgen, W.; Boeck, G.; B. A 60 GHz SiGe-HBT Power Amplifier With 20% PAE at 15 dBm Output Power IEEE, Microwave and Wireless Components Letters, March 2008
    • Van-Hoang Do; Subramanian, V.; Keusgen, W.; Boeck, G.; B. "A 60 GHz SiGe-HBT Power Amplifier With 20% PAE at 15 dBm Output Power" IEEE, Microwave and Wireless Components Letters, March 2008
  • 4
    • 0038183518 scopus 로고    scopus 로고
    • Novel collector design for high-speed SiGe:C HBTs
    • Dec
    • B. Heinemann, H. Rücker, R. Barth, et al.: "Novel collector design for high-speed SiGe:C HBTs", IEEE IEDM Tech. Dig, pp. 775-778, Dec. 2002.
    • (2002) IEEE IEDM Tech. Dig , pp. 775-778
    • Heinemann, B.1    Rücker, H.2    Barth, R.3
  • 7
    • 72449137255 scopus 로고    scopus 로고
    • Lumped Element Coplanar-Microstrip-Transition Model for Si-RFICs up to 90 GHz
    • Gruner, D.; Zihui Zhang; Korndoerfer, F.; Boeck, G.; "Lumped Element Coplanar-Microstrip-Transition Model for Si-RFICs up to 90 GHz" IEEE RFIT.2007
    • (2007) IEEE RFIT
    • Gruner, D.1    Zhang, Z.2    Korndoerfer, F.3    Boeck, G.4
  • 9
    • 72449187615 scopus 로고    scopus 로고
    • A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology
    • Jing-Lin Kuo; Zuo-Min Tsai; Kun-You Lin; Huei Wang; "A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology" IEEE LMWC.2008
    • (2008) IEEE LMWC
    • Kuo, J.-L.1    Tsai, Z.-M.2    Lin, K.-Y.3    Wang, H.4
  • 10
    • 72449200728 scopus 로고    scopus 로고
    • A 13.5-to-17 dBm P1dB, selective, high-gain power amplifier for 60 GHz applications in SiGe
    • Glisic, S.; Scheytt, C.; "A 13.5-to-17 dBm P1dB, selective, high-gain power amplifier for 60 GHz applications in SiGe" IEEE BCTM 2008
    • (2008) IEEE BCTM
    • Glisic, S.1    Scheytt, C.2
  • 11
    • 34347228081 scopus 로고    scopus 로고
    • 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control
    • Pfeiffer, U.R.; Goren, D.; "20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control" IEEE JSSC.2007
    • (2007) IEEE JSSC
    • Pfeiffer, U.R.1    Goren, D.2
  • 12
    • 27844436074 scopus 로고    scopus 로고
    • Analyses and design of bias circuits tolerating output voltages above BVCEO Solid-State Circuits
    • Veenstra, H.; Hurkx, G.A.M.; van Goor, D.; Brekelmans, H.; Long, J.R.; "Analyses and design of bias circuits tolerating output voltages above BVCEO" Solid-State Circuits, IEEE Journal 2005
    • (2005) IEEE Journal
    • Veenstra, H.1    Hurkx, G.A.M.2    van Goor, D.3    Brekelmans, H.4    Long, J.R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.