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Solid State Communications

Volumn 151, Issue 17, 2011, Pages 1128-1130

Electronic and magnetic properties of silicon adsorption on graphene

(6) Hu, C H a Zheng, Y a Zhang, Y a Wu, S Q a Wen, Y H a Zhu, Z Z a

a XIAMEN UNIVERSITY (China)

Author keywords

A. Surfaces and interfaces; C. Point defects; D. Electronic states

Indexed keywords

C. POINT DEFECTS; D. ELECTRONIC STATES; DENSITY OF STATE; ELECTRONIC AND MAGNETIC PROPERTIES; ELECTRONIC ORIGIN; FIRST PRINCIPLES METHOD; MAGNETIC BEHAVIOR; NONMAGNETIC STATE; NONMAGNETICS; SI ATOMS; SILICON ADSORPTION; SPIN-POLARIZED; STRUCTURAL CHANGE; STRUCTURAL STABILITIES; SURFACES AND INTERFACES; SURROUNDING ENVIRONMENT;

ADATOMS; ADSORPTION; CRYSTAL ATOMIC STRUCTURE; MAGNETIC PROPERTIES; MAGNETISM; POINT DEFECTS; SILICON; STABILITY;

GRAPHENE;

EID: 79960747596 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2011.05.027 Document Type: Article

Times cited : (19)

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