Quantum confinement effect on 2DEG in InGaN/InN HEMT with an interfacial layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2288-2291

  Muhtadi, Sakib M ^a   Sajjad Hossain, S M ^a   Bhuiyan, Ashraful G ^a,b   Sasamoto, K ^b   Hashimoto, A ^b   Yamamoto, A ^b  

^a KHULNA UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b UNIVERSITY OF FUKUI   (Japan)

Author keywords

2DEG; HEMT; InGaN InN; Interfacial; Quantum confinement

Indexed keywords

CLASSICAL MODEL; INGAN/INN; INTERFACIAL; INTERFACIAL LAYER; POLARIZATION EFFECT; QUANTUM CONFINEMENT EFFECTS; QUANTUM EFFECTS; SELF-CONSISTENT SOLUTION;

GALLIUM NITRIDE; POISSON EQUATION; QUANTUM CONFINEMENT; QUANTUM ELECTRONICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79960721264     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000974     Document Type: Article

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