Optimization of two-dimensional electron gases and I-V characteristics for AlGaN/GaN HEMT devices

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 869-875

  Wang, Yan ^a   Ma, Long ^a   Yu, Zhiping ^a   Tian, Lilin ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

2DEG; AlGaN GaN heterojunction; HEMT; Polarization

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; OPTIMIZATION; POISSON EQUATION; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

ALGAN/GAN HETEROJUNCTIONS; CONDUCTION BAND; GATE VOLTAGE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 9944224188     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.042     Document Type: Article

References (9)

1. O. Ambacher, J. Phys. D 31 (1998) 2653.
2. L.F. Eastman, U.K. Mishra, IEEE Spectr. 39 (2002) 28.
3. W.Q. Chen, S.K. Hark, J. Appl. Phys. 77 (1995) 5747.
4. E.S. Hellman, MRS Internet J. Nitride Semicond. Res. 3 (1998) 11.
5. F. Sacconi, A.D. Carlo, P. Lugli, H. Morkoc, IEEE Trans. Electron Devices 48 (2001) 450.
6. O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, J. Appl. Phys. 85 (1999) 3222.
7. M.S. Shur, A.D. Bykhovski, R. Gaska, Solid-State Electron. 44 (2000) 205.
8. S. Frank, J. Comput Phys. 6 (1970) 56.
9. L. Ma, Y. Wang, Z. Yu, L. Tian, IWJT-2004, 190.