Excimer laser annealing and chemical texturing of ZnO:Al sputtered at room temperature for photovoltaic applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 10, 2011, Pages 2823-2830

  Johnson, E V ^a   Prodhomme, P ^b   Boniface, C ^c   Huet, K ^c   Emeraud, T ^d   Roca I Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b TOTAL   (France)

^c Process and Application Team   (France)

^d PV Business Unit   (Belgium)

Author keywords

Laser; Light trapping; Photovoltaic; Silicon; Texturing; Transparent conductive oxide

Indexed keywords

ANNEALED FILMS; AS-DEPOSITED FILMS; AT-WAVELENGTH; BAND GAPS; BLUE SHIFT; CHEMICAL ETCHING; EXCIMER LASER ANNEALING; EXCIMERS; FILM SURFACES; FILM TRANSPARENCY; FLUENCES; HYDROGENATED MICROCRYSTALLINE SILICON; LASER ANNEALING; LIGHT-TRAPPING; PHOTOCURRENT DENSITY; PHOTOVOLTAIC; PHOTOVOLTAIC APPLICATIONS; RF-SPUTTERING; ROOM TEMPERATURE; SINGLE PULSE; SPECTRAL DISTRIBUTION; TEXTURED FILMS; TRANSPARENT CONDUCTIVE OXIDES; ZNO; ZNO:AL FILMS;

ALUMINUM; ANNEALING; ELECTRIC RESISTANCE; ETCHING; EXCIMER LASERS; LIGHT TRANSMISSION; MICROCRYSTALLINE SILICON; PHOTOVOLTAIC CELLS; THIN FILMS; TRANSPARENCY; ZINC OXIDE;

PHOTOVOLTAIC EFFECTS;

EID: 79960561672     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.05.043     Document Type: Article

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