Blue-green to near-IR switching electroluminescence rom Si-rich silicon oxide/nitride bilayer structures

Optics Letters

Volumn 36, Issue 14, 2011, Pages 2617-2619

  Berencen Y ^a   Jambois, O ^a   Ramirez J M ^a   Rebled, J M ^a,d   Estrade S ^a   Peiro F ^a   Dominguez C ^b   Rodriguez J A ^c   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c UNIVERSITY OF HAVANA   (Cuba)

^d TEM MAT   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; METALS; MOS DEVICES; NANOCLUSTERS; OXIDE SEMICONDUCTORS; SILICA;

BI-LAYER STRUCTURE; GREEN EMISSIONS; METAL OXIDE SEMICONDUCTOR; SI IONS; SI NANOCLUSTER; SI-RICH SILICON OXIDES; TRANSPORT ANALYSIS; TWO WAVELENGTH;

SILICON OXIDES;

EID: 79960531218     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.36.002617     Document Type: Article

References (13)

1. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. ater. 4, 143 (2005).
2. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. ett. 93, 151116 (2008).
3. M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. avarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, anotechnology 20, 405201 (2009).
4. Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I.Wong, S. F. Yu, and W. P. Goh, Opt. Express 18, 20439 2010).
5. A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. acona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. hys. Lett. 81, 1866 (2002).
6. S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. ett. 90, 181121 (2007).
7. J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. ontserrat, and C. Domínguez, J. Mater. Res. 23, 1513 2008).
8. J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
9. R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, 1981).
11. Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. imoshenko, P. K. Kashkarov, B. V. Kamenev, and L. sybeskov, Semiconductor 40, 1052 (2006).
12. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and . R. Kirtley, Phys. Rev. B 31, 8124 (1985).
13. J. Robertson and M. J. Powell, Appl. Phys. Lett. 44, 415 1984).