Junction recombination current in abrupt junction diodes under forward bias

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 3083-3090

  Corkish, Richard ^a   Green, Martin A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT JUNCTION DIODES; BAND GAP NARROWING; CARRIER LIFETIME; FORWARD BIAS; JUNCTION RECOMBINATION CURRENT; NUSSBAUM MODEL; SPACE CHARGE RECOMBINATION;

CHARGE CARRIERS; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; FINITE ELEMENT METHOD; INTERPOLATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

ELECTRIC CURRENTS;

EID: 0030241860     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363168     Document Type: Article

References (38)

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